Sputtering Target Material

ABSTRACT

An object of the present invention is to improve the mechanical strength of a sputtering target, and in order to achieve such an object, there is provided a sputtering target material including: in at. %, 10 to 50% of B; 0 to 20% in total of one or more elements selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag; and the balance of at least one of Co and Fe, and unavoidable impurities, in which a hydrogen content is 20 ppm or less.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a sputtering target material useful for producing an alloy thin film in a magnetic tunneling junction (MTJ) element, an HDD, a medium for magnetic recording, or the like.

Background Art

A magnetic random-access memory (MRAM) includes a magnetic tunneling junction (MTJ) element. Such a magnetic tunneling junction (MTJ) element has a structure such as CoFeB/MgO/CoFeB and exhibits features such as a high tunnel magnetoresistance (TMR) signal and a low switching current density (Jc).

A CoFeB thin film of a magnetic tunneling junction (MTJ) element is formed by sputtering a CoFeB target. Examples of known CoFeB sputtering target materials include a sputtering target material produced by sintering an atomized powder as disclosed in Japanese Patent Laid-Open Publication No. 2004-346423 (Patent Literature 1).

CITATION LIST Patent Literature [PTL 1] Japanese Patent Laid-Open Publication No. 2004-346423 SUMMARY OF THE INVENTION Technical Problem

A method in which an atomized powder is sintered to produce a sputtering target material in such a manner as in Patent Literature 1 is an effective technique. However, only the method described in Patent Literature 1 does not make it possible to produce a favorable target material. In other words, there is a problem in that only simple sintering of an atomized powder results in a decrease in the strength of a sputtering target material.

Solution to Problem

As a result of intensively advancing development in order to solve the problem described above, the present inventors found that the mechanical strength of a sputtering target can be improved by reducing the content of hydrogen in a sputtering target material. Thus, the present invention was accomplished.

The present invention encompasses the following inventions:

[1] A sputtering target material comprising in at. %: 10 to 50% of B; 0 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag; and the balance of at least one of Co and Fe, and unavoidable impurities, wherein a hydrogen content is 20 ppm or less. [2] The sputtering target material according to the above [1], wherein the sputtering target material comprises, in at. %, 5 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag. [3] The sputtering target material according to the above [1], wherein the sputtering target material has a bending strength of 200 MPa or more.

Advantageous Effects of Invention

According to the present invention, a sputtering target material having excellent mechanical strength is provided.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described in detail below. Unless otherwise specified, “%” in the present invention means at. %.

In a sputtering target material according to the present invention, the content of B is 10 to 50%. An alloy thin film formed in sputtering does not sufficiently become amorphous when the content of B is less than 10%, while the strength of a sputtering target material decreases even if the content of hydrogen is 20 ppm or less when the content of B is more than 50%. Therefore, the content of B is adjusted to 10 to 50%. The content of B is preferably 20 to 50%.

In the sputtering target material according to the present invention, the total content of one or more elements selected from the group (hereinafter may be referred to as “element group”) consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag is 0 to 20%. When only one kind of an element is selected from the above element group, “total content of one or more elements selected from the above element group” means the content of the one element. The strength of the sputtering target material decreases even if the content of hydrogen is 20 ppm or less when the total content of one or more elements selected from the above element group is more than 20%. Therefore, the content of one or more elements selected from the above element group is adjusted to 20% or less. The total content of one or more elements selected from the above element group is preferably 12% or less, and still more preferably 10% or less. When the sputtering target material according to the present invention does not contain one or more elements selected from the above element group, the total content thereof is 0%. When the sputtering target material according to the present invention contains one or more elements selected from the above element group, the total content thereof can be adjusted in a range of from more than 0 to 20% as appropriate, and is, for example, 5% or more.

The sputtering target material according to the present invention comprises the balance of at least one of Co and Fe, and unavoidable impurities.

Co and Fe are elements that impart magnetism. The total content of Co and Fe is 30% or more. When the sputtering target material according to the present invention contains only one of Co and Fe, “total content of Co and Fe” means the content of the one. The total content of Co and Fe is preferably 40% or more, and still more preferably 50% or more.

In the sputtering target material according to the present invention, the content of hydrogen is 20 ppm or less. Hydrogen is an element that is unavoidably present in a powder (for example, an atomized powder such as a gas-atomized powder) used as a raw material of the sputtering target material. However, the strength of the sputtering target material decreases when the content of hydrogen remaining in the sputtering target material is more than 20 ppm. Therefore, the content of hydrogen is adjusted to 20 ppm or less. The content of hydrogen is preferably 10 ppm or less. The sputtering target material according to the present invention may contain up to 1000 ppm of other unavoidable impurities.

The sputtering target material in which the content of hydrogen is 20 ppm or less can be produced by: removing coarse particles having a particle diameter of 500 μm or more from an atomized powder of an alloy comprising 10 to 50% of B, 0 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag, and the balance of at least one of Co and Fe, and unavoidable impurities; then removing fine particles from the powder from which the coarse particles have been removed, to prepare a powder that satisfies any of particle size conditions A, B, and C; and then sintering the powder that satisfies any of the particle size conditions A, B, and C.

The particle size conditions A, B, and C are defined as follows.

The particle size condition A is defined as a condition that the cumulative volume of particles having a particle diameter of 5 μm or less is 10% or less, and the cumulative volume of particles having a particle diameter of 30 μm or less is 40% or less, in the particle size distribution of powder (particle assemblage).

The particle size condition B is defined as a condition that the cumulative volume of particles having a particle diameter of 5 μm or less is 8% or less, and the cumulative volume of particles having a particle diameter of 30 μm or less is 35% or less, in the particle size distribution of a powder (particle assemblage).

The particle size condition C is defined as a condition that the cumulative volume of particles having a particle diameter of 5 μm or less is 5% or less, and the cumulative volume of particles having a particle diameter of 30 μm or less is 30% or less, in the particle size distribution of a powder (particle assemblage).

A powder that satisfies all the particle size conditions A, B, and C is regarded as a powder that satisfies the particle size condition C, and a powder that satisfies the particle size conditions A and B is regarded as a powder that satisfies the particle size condition B. In addition, “particle diameter” and “particle size distribution” mean a particle diameter and a particle size distribution, measured by a laser diffraction/scattering-type particle size distribution measurement apparatus (MICROTRAC).

All of the particle size conditions A, B, and C are conditions for removing coarse particles having a particle diameter of 500 μm or more from a powder (for example, an atomized powder such as a gas-atomized powder) as a raw material of the sputtering target material and then removing fine particles from the powder from which the coarse particles have been removed. In each particle size condition, a particle size distribution is set under the two conditions, i.e., the first condition regarding the amount of particles having a particle diameter of 5 μm or less and the second condition regarding the amount of particles having a particle diameter of 30 μm or less. In the particle size condition A, the cumulative volume of particles having a particle diameter of 5 μm or less is regulated to 10% or less in the first condition, and the cumulative volume of particles having a larger particle size and having a particle diameter of 30 μm or less is regulated to 40% or less in the second condition. In the particle size condition B, the cumulative volume of particles having a particle diameter of 5 μm or less is regulated to 8% or less in the first condition, and the cumulative volume of particles having a particle diameter of 30 μm or less is regulated to 35% or less in the second condition. In the particle size condition C, the cumulative volume of particles having a particle diameter of 5 μm or less is regulated to 5% or less in the first condition, and the cumulative volume of particles having a particle diameter of 30 μm or less is regulated to 30% or less in the second condition. In other words, in the particle size conditions A, B, and C, the cumulative volume of particles having a particle diameter of 5 μm or less is regulated to be decreased to 10% or less, 8% or less, and 5% or less in a stepwise manner, and the cumulative volume of particles having a particle diameter of 30 μm or less is regulated to be decreased to 40% or less, 35% or less, and 30% or less in a stepwise manner. The hydrogen content and bending strength of a sputtering target material produced using a gas-atomized powder that satisfies any of the particle size conditions A, B, and C are shown in Examples.

A powder that satisfies any of the particle size conditions A, B, and C can be prepared by removing coarse particles having a particle diameter of 500 μm or more, which are not suitable for molding, from a powder (for example, an atomized powder such as a gas-atomized powder) as a raw material of the sputtering target material, and then removing fine particles from the powder from which the coarse particles have been removed. Examples of atomization methods for producing the atomized powder include a gas atomization method, a water atomization method, a disk atomization method, and a plasma atomization method. A gas atomization method is preferred. The removal of the coarse particles having a particle diameter of 500 μm or more can be performed by classification using a sieve having an opening of 500 μm or less, for example, an opening of 250 to 500 μm. The removal of the fine particles for preparing the powder that satisfies any of the particle size conditions A, B, and C can be performed by classification using sieves having an opening of 5 μm or less and/or an opening of 30 μm or less. The content of hydrogen can be set at 20 ppm or less by producing a solidified molded product by using the powder that satisfies any of the particle size conditions A, B, and C. A sputtering target material can be produced by processing the solidified molded product into a disk shape by wire cut, turning processing, and plane polishing. The sputtering target material produced in such a manner has improved strength.

The sputtering target material according to the present invention preferably has a bending strength of 200 MPa or more. The sputtering target material according to the present invention has a bending strength of, for example, 210 MPa or more, 220 MPa or more, 230 MPa or more, 240 MPa or more, 250 MPa or more, 260 MPa or more, 270 MPa or more, 280 MPa or more, 290 MPa or more, or 300 MPa or more.

The bending strength is measured as follows. A specimen having a longitudinal length of 4 mm, a width of 25 mm, and a thickness of 3 mm, obtained from a sintered alloy by division by a wire, is evaluated by a three-point bending test, to obtain three-point bending strength as the bending strength. In the three-point bending test conducted at a supporting-point distance of 20 mm, a three-point bending strength is calculated from a stress (N) measured when a pressure is applied downward in a thickness direction to a plane having a longitudinal length of 4 mm and a width of 25 mm, on the basis of the following equation:

three-point bending strength (MPa)=(3×stress (N)×supporting-point distance (mm)/(2×specimen width (mm)×(specimen thickness (mm)²).

Examples

The sputtering target material according to the present invention will be specifically described below with reference to Examples.

A molten raw material was weighed for each composition shown in Tables 1, 2, 5, and 6, induction-heating melted in a refractory crucible having an Ar gas atmosphere with a reduced pressure or a vacuum atmosphere, then tapped from a nozzle having a diameter of 8 mm in the lower portion of the crucible, and gas-atomized with an Ar gas. A solidification rate can be controlled by adjusting the injection pressure of the Ar gas. The solidification rate is increased with increasing the injection pressure. The particle size distribution of a gas-atomized powder can be adjusted by controlling the solidification rate. The width of the particle size distribution is decreased with increasing the solidification rate.

A powder that satisfied any of the particle size conditions A, B, and C was prepared by removing coarse particles having a particle diameter of 500 μm or more, which were not suitable for molding, from the obtained gas-atomized powder, and then removing fine particles from the powder from which the coarse particles had been removed. The removal of the coarse particles having a particle diameter of 500 μm or more, which were not suitable for molding, was performed by classification using a sieve having an opening of 500 μm. The removal of the fine particles for preparing the powder that satisfied the particle size condition A was performed by classification using a sieve having an opening of 35 μm. The removal of the fine particles for preparing the powder that satisfied the particle size condition B was performed by classification using a sieve having an opening of 30 μm. The removal of the fine particles for preparing the powder that satisfied the particle size condition C was performed by classification using a sieve having an opening 25 μm. The powder that satisfied any of the particle size conditions A, B, and C was put in a furnace at 110° C. and dried to remove water from the powder. The dried powder was used as a raw powder. The raw powder was degassing-charged into an SC can having an outer diameter of 220 mm, an inner diameter of 210 mm, and a length of 200 mm, and the powder-filled billet was sintered under each condition shown in Table 1 or Table 2 to produce a sintered body.

A molten raw material was weighed for each composition shown in the raw powder columns of Table 3 and Table 7. In a manner similar to the case of each composition shown in Tables 1, 2, 5, and 6, the molten raw material was induction-heating melted in a refractory crucible having an Ar gas atmosphere with a reduced pressure or a vacuum atmosphere, then tapped from a nozzle having a diameter of 8 mm in the lower portion of the crucible, and gas-atomized with an Ar gas. Commercially available powders having a powder size of 150 μm or less were used as pure Ti, pure B, pure V, and pure Cr among the raw powders shown in Table 7. A powder that satisfied any of the particle size conditions A, B, and C was prepared by removing coarse particles having a particle diameter of 500 μm or more, which were not suitable for molding, from the obtained gas-atomized powder, and then classifying the powder from which the coarse particles had been removed, to remove fine particles. The removal of the coarse particles and the fine particles was performed in manners similar to the manners described above. The powder that satisfied any of the particle size conditions A, B, and C was put in a furnace at 110° C. and dried to remove water from the powder. Such dried powders were used as raw powders. The raw powders were mixed at a mixture ratio shown in Table 3 in a V-type mixer for 30 minutes to thereby form a composition shown in Table 3, and the resultant mixture was degassing-charged into an SC can having an outer diameter of 220 mm, an inner diameter of 210 mm, and a length of 200 mm. The powder-filled billet described above was sintered under conditions shown in Table 3 to produce a sintered body. The solidified molded product produced by the method described above was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cut, turning processing, and plane polishing, to form a sputtering target material.

Then, a molten raw material was weighed for each composition shown in Table 4, induction-heating melted in a refractory crucible having an Ar gas atmosphere with a reduced pressure or a vacuum atmosphere, then tapped from a nozzle having a diameter of 8 mm in the lower portion of the crucible, and gas-atomized with an Ar gas. Coarse particles having a particle diameter of 500 μm or more, which were not suitable for molding, were removed from the obtained gas-atomized powder, and the powder from which the coarse particles had been removed and from which fine particles were not removed was used as a raw powder. The raw powder was degassing-charged into an SC can having an outer diameter of 220 mm, an inner diameter of 210 mm, and a length of 200 mm. The powder-filled billet described above was sintered under conditions shown in Table 4 to produce a sintered body. The solidified molded product produced by the method described above was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cut, turning processing, and plane polishing, to form a sputtering target material.

TABLE 1 Composition of sputtering target material Particle Molding Molding Molding Hydrogen Bending (at. %) size Particle temperature time pressure content strength No Co Fe B condition size (° C.) (h) (MPa) (ppm) (Mpa) Remarks 1 31.5 58.5 10 A ≤5 μm: 9% 1000 2 100 18 820 Present ≤30 μm: 38% Invention 2 33.25 51.75 15 B ≤5 μm: 6% 1000 2 100 10 900 Examples ≤30 μm: 33% 3 28 52 20 A ≤5 μm: 6% 1000 2 100 13 580 ≤30 μm: 33% 4 18 72 10 A ≤5 μm: 7% 1000 2 100 15 790 ≤30 μm: 37% 5 60 20 20 B ≤5 μm: 3% 1000 2 150 9 630 ≤30 μm: 32% 6 72 8 20 A ≤5 μm: 3% 1000 2 150 14 650 ≤30 μm: 36% 7 90 0 10 C ≤5 μm: 4% 700 3 150 8 880 ≤30 μm: 25% 8 80 0 20 C ≤5 μm: 2% 800 3 150 6 630 ≤30 μm: 21% 9 70 0 30 B ≤5 μm: 6% 1000 3 100 8 480 ≤30 μm: 32% 10 60 0 40 C ≤5 μm: 4% 1100 3 100 4 260 ≤30 μm: 18% 11 50 0 50 C ≤5 μm: 0% 1100 5 150 3 250 ≤30 μm: 25% 12 83 5 12 A  ≤5 μm: 10% 800 5 150 15 670 ≤30 μm: 40% 13 5 70 25 B ≤5 μm: 8% 1100 5 150 9 690 ≤30 μm: 35% 14 62 10 28 A ≤5 μm: 8% 800 5 150 14 400 ≤30 μm: 39% 15 48 20 32 A ≤5 μm: 9% 800 5 150 17 300 ≤30 μm: 35% 16 22 40 38 C ≤5 μm: 5% 900 5 150 6 290 ≤30 μm: 30% 17 25 30 45 A ≤5 μm: 8% 1000 4 150 8 280 ≤30 μm: 38% 18 5 45 50 B ≤5 μm: 5% 1000 3 100 15 580 ≤30 μm: 35% 19 70 5 25 A ≤5 μm: 9% 800 5 150 12 660 ≤30 μm: 38% 20 40 40 20 B ≤5 μm: 5% 800 5 150 10 650 ≤30 μm: 31%

TABLE 2 Composition of sputtering target material Particle Molding Molding Molding Hydrogen Bending (at. %) size Particle temperature time pressure content strength No. Co Fe B condition size (° C.) (h) (MPa) (ppm) (Mpa) Remarks 21 60 20 20 C ≤5 μm: 2% 800 5 150 5 630 Present ≤30 μm: 27% Invention 22 0 90 10 A  ≤5 μm: 10% 800 4 130 12 820 Examples ≤30 μm: 39% 23 0 80 20 A ≤5 μm: 8% 800 5 130 15 580 ≤30 μm: 39% 24 0 70 30 A  ≤5 μm: 10% 700 3 130 15 380 ≤30 μm: 36% 25 0 60 40 A  ≤5 μm: 10% 1000 5 130 12 230 ≤30 μm: 39% 26 0 50 50 B ≤5 μm: 7% 1100 5 130 7 250 ≤30 μm: 33%

TABLE 3 Composition of sputtering Mixed raw Particle Molding Molding Molding Hydrogen Bending target material powder (at. %) size Particle temperature time pressure content strength No. (at. %) ( ): mixture ratio condition size (° C.) (h) (MPa) (ppm) (Mpa) Remarks 27 20Co—60Fe—20B Fe—1Co—20B(25) A ≤5 μm: 8% 1000 5 150 14 610 Present Co—20B(75) ≤30 μm: 36% Invention 28 40Co—40Fe—20B Fe—1Co—20B(50) B ≤5 μm: 7% 1000 5 100 8 640 Examples Co—20B(50) ≤30 μm: 34% 29 60Co—20Fe—20B Fe—1Co—20B(75) B ≤5 μm: 6% 900 4 130 12 600 Co—20B(25) ≤30 μm: 32% 30 50Co—20Fe—30B Fe—1Co—30B(28) C ≤5 μm: 4% 1000 2 120 8 480 Co—30B(72) ≤30 μm: 28% 31 15Co—45Fe—40B Fe—1Co—40B(75) B ≤5 μm: 6% 1100 3 150 7 230 Co—40B(25) ≤30 μm: 33% 32 40Co—10Fe—50B Fe—1Co—40B(20) B ≤5 μm: 5% 1100 2 150 8 220 Co—40B(80) ≤30 μm: 31%

TABLE 4 Composition of sputtering target material Molding Molding Molding Hydrogen Bending (at. %) Particle temperature time pressure content strength No. Co Fe B size (° C.) (h) (MPa) (ppm) (Mpa) Remarks 33 31.5 58.5 10  ≤5 μm: 11% 1000 2 100 25 150 Comparative ≤30 μm: 39% Examples 34 33.25 61.75  5 ≤5 μm: 9% 1000 2 100 30 180 ≤30 μm: 41% 35 28 52 20  ≤5 μm: 12% 1000 2 100 25 130 ≤30 μm: 34% 36 18 72 10 ≤5 μm: 7% 1000 2 100 22 160 ≤30 μm: 42% 37 60 20 20  ≤5 μm: 13% 1000 2 100 23 150 ≤30 μm: 29% 38 72 8 20 ≤5 μm: 4% 1000 2 100 25 140 ≤30 μm: 43% 39 70 0 30  ≤5 μm: 14% 1000 5 150 26 100 ≤30 μm: 45% NOTE: The underlined figures fall outside the scope of the present invention.

TABLE 5 Composition of sputtering target material (at. %) Others No. Co Fe B Ti Zr Hf V Nb Ta Cr Mo W Mn Ni Cu Others Total of others 40 65 0 30 5 0 0 0 0 0 0 0 0 0 0 0 — 5 41 65 5 20 5 1 1 1 1 1 0 0 0 0 0 0 — 10 42 55 15 10 9 1 1 1 1 1 1 1 1 1 1 0 Pt: 1 20 43 45 30 15 0 10 0 0 0 0 0 0 0 0 0 0 — 10 44 10 45 30 0 15 0 0 0 0 0 0 0 0 0 0 — 15 45 10 50 20 0 10 1 1 1 1 1 1 1 1 1 1 — 20 46 25 60 10 0 0 4 0 0 0 0 0 0 0 0 0 Re: 1 5 47 5 70 10 0 0 15 0 0 0 0 0 0 0 0 0 — 15 48 0 70 10 0 0 10 0 2 2 2 2 2 0 0 0 — 20 49 10 35 50 0 0 0 5 0 0 0 0 0 0 0 0 — 5 50 0 45 40 0 0 0 10 0 0 0 0 0 0 0 0 Ru: 5 15 51 41 4 40 0 0 0 15 0 0 0 0 0 0 0 0 — 15 52 72 8 10 0 0 0 0 5 0 0 0 0 0 0 0 Rh: 5 15 53 61 9 15 0 0 0 0 15 0 0 0 0 0 0 0 — 15 54 47 13 20 0 0 0 0 10 0 0 10 0 0 0 0 — 20 55 42 28 20 0 0 0 0 0 10 0 0 0 0 0 0 — 10 56 29 34 17 10 0 0 0 0 10 0 0 0 0 0 0 — 20 57 16 46 18 10 0 1 0 0 0 1 1 7 0 0 0 — 20 58 13 45 22 5 0 0 0 0 0 5 0 0 0 0 0 Ir: 10 20 59 12 44 24 0 10 0 0 0 0 10 0 0 0 0 0 — 20 60 0 60 10 0 10 0 0 0 0 20 0 0 0 0 0 — 30 61 0 50 30 0 15 0 0 0 0 0 5 0 0 0 0 — 20 62 35 35 10 0 0 10 0 0 0 0 10 0 0 0 0 — 20 63 22 48 10 0 0 10 0 0 0 0 5 0 0 0 0 Pd: 5 20 64 19 41 20 0 0 15 0 0 0 0 0 5 0 0 0 — 20 65 41 19 20 0 0 0 10 0 0 0 0 2 3 3 2 — 20 66 37 23 20 0 0 0 10 0 10 0 0 0 0 0 0 — 20 67 40 20 20 0 0 0 15 0 0 0 0 0 5 0 0 — 20 68 55 15 10 0 0 0 0 20 0 0 0 0 0 0 0 — 20 69 56 14 10 0 0 0 0 10 0 0 0 0 10 0 0 — 20 70 5 65 10 0 0 0 0 15 0 0 0 0 0 5 0 — 20 Particle Particle Molding Molding size size temper- Molding pres- Hydrogen Bending condi- ≤5 ≤30 ature time sure content strength No. tion μm μm (° C.) (h) (MPa) (ppm) (MPa) Remarks 40 A 10 36 1000 2 100 20 1500 Present 41 B 6 33 980 2 100 8 800 Invention 42 C 3 29 1000 2 100 3 700 Examples 43 A 9 36 1050 2 100 15 1300 44 B 8 33 1050 2 100 8 1000 45 C 4 35 1050 3 100 7 800 46 A 9 40 900 3 100 15 1200 47 B 8 34 950 3 100 8 1000 48 C 1 10 1000 3 100 8 900 49 A 10 36 1100 4 100 15 1600 50 B 6 33 1080 4 100 10 1500 51 C 5 29 1050 4 100 3 1400 52 C 5 15 1200 4 120 3 1000 53 A 10 37 1230 4 120 7 1000 54 B 7 31 1250 4 120 13 800 55 A 9 38 1300 4 120 15 1000 56 B 7 34 1280 4 120 8 900 57 C 3 15 1150 4 120 4 900 58 A 10 37 1120 5 120 14 1200 59 B 6 31 1110 5 120 7 1500 60 C 1 21 1100 5 120 8 1300 61 A 10 39 1230 5 150 10 1500 62 B 6 33 1240 5 150 6 1300 63 C 0 5 1260 4 150 3 1300 64 A 9 39 1200 10 150 3 1300 65 B 8 35 1270 10 150 7 1000 66 C 5 23 1190 10 120 5 1000 67 A 10 39 1170 3 120 11 1100 68 B 7 34 1160 4 120 9 1200 69 C 1 18 1150 3 120 3 1100 70 A 10 39 1200 10 150 15 1500

TABLE 6 Composition of sputtering target material (at. %) Others No. Co Fe B Ti Zr Hf V Nb Ta Cr Mo W Mn Ni Cu Others Total of others 71 25 35 20 0 0 0 0 0 20 0 0 0 0 0 0 — 20 72 20 20 40 0 0 0 0 0 10 0 0 0 0 10 0 — 20 73 40 10 30 0 0 0 0 0 10 0 0 0 0 0 0 Pt: 10 20 74 40 20 20 0 0 0 0 0 0 20 0 0 0 0 0 — 20 75 30 10 50 0 0 0 0 0 0 10 0 0 0 0 0 — 10 76 41 18 30 0 0 0 0 0 0 5 0 0 0 0 0 Re: 2, 11 Ru: 1, Rh: 2, Ir: 1 77 40 30 10 0 0 0 0 0 0 0 20 0 0 0 0 — 20 78 15 40 20 0 0 0 0 0 0 0 5 0 0 0 0 Pd: 5, 20 Pt: 5, Ag: 5 79 15 40 30 0 0 0 0 0 0 0 15 0 0 0 0 — 15 80 25 45 10 0 0 0 0 0 0 0 0 20 0 0 0 — 20 81 15 65 10 0 0 0 0 0 0 0 0 10 0 0 0 — 10 82 50 15 10 0 0 0 0 0 0 0 0 15 0 0 0 — 15 83 20 50 10 0 0 0 0 0 0 0 0 0 0 0 20 — 20 84 34 32 20 0 0 0 0 0 0 0 1 1 1 1 4 Re:1, 14 Ru: 1, Ir: 1, Pd:1, Pt:1, Ag: 1 85 36 29 20 0 0 0 0 0 0 0 0 0 0 0 10 Ag: 5 15 86 30 40 10 0 0 0 0 0 0 0 0 0 0 0 0 Re: 20  0 87 40 40 10 0 0 0 0 0 0 0 0 0 0 0 0 Ru: 10  0 88 49 20 10 21  0 0 0 0 0 0 0 0 0 0 0 — 21 89 28 30 20 0 0 0 0 10 12 0 0 0 0 0 0 — 22 90 44 5 30 0 0 0 0 0 10 0 0 0 11 0 0 — 21 Particle Particle Molding Molding size size Temper- Molding pres- Hydrogen Bending condi- ≤5 ≤30 ature time sure content strength No. tion μm μm (° C.) (h) (MPa) (ppm) (MPa) Remarks 71 B 8 31 1220 8 150 5 1400 Present 72 C 4 30 1200 7 150 3 1400 Invention 73 A 10 39 1250 7 150 14 1400 Examples 74 C 3 25 1250 7 150 3 1300 75 B 8 35 1270 7 100 10 1300 76 C 0 6 1000 5 100 7 1500 77 B 8 33 900 5 100 3 1300 78 A 9 36 800 5 130 13 1200 79 A 9 36 1150 7 130 13 1500 80 A 10 39 1150 7 130 15 1500 81 B 8 33 1150 7 130 7 1600 82 B 7 32 1100 3 130 7 1300 83 B 7 33 1000 3 130 7 1200 84 C 3 28 1000 3 130 4 1300 85 C 3 20 1000 3 130 3 1000 86 C 2 18 900 2 130 3 1000 87 A 10 35 900 2 130 13 900 88 A 9 36 1000 2 130 20 100 Comparative 89 B 6 33 1150 2 150 8 100 Examples 90 C 4 28 1050 2 120 5 100 NOTE: The underlined figures fall outside the scope of the present invention.

TABLE 7 Composition of sputtering target material (at. %) Others No. Co Fe B Ti Zr Hf V Nb Ta Cr Mo W Mn Ni Cu Others Total of others 91 50 0 30 10 0 0 0 0 0 0 0 0 0 0 0 — 10 92 55 5 20 0 0 0 0 0 10 0 0 0 0 0 0 — 10 93 55 15 10 0 0 0 0 0 0 0 10 0 0 0 0 — 10 94 45 30 15 0 0 0 0 0 0 0 0 0 0 10 0 — 10 95 15 45 30 0 5 0 0 5 0 0 0 0 0 0 0 — 10 96 20 50 20 0 0 0 10 0 0 0 0 0 0 0 0 — 10 97 20 50 10 0 0 5 5 0 0 0 5 0 0 5 0 — 20 98 10 70 10 0 0 0 0 0 0 0 0 0 0 0 0 Re: 10 10 99 20 50 10 0 0 0 0 0 0 0 0 20 0 0 0 — 20 100 15 15 50 0 0 0 0 0 0 0 0 0 10 5 5 — 20 101 0 45 40 0 5 0 0 5 0 0 0 0 0 0 0 Pd: 5 15 102 46 4 40 0 0 0 0 0 0 10 0 0 0 0 0 — 10 103 52 8 10 0 0 0 0 0 0 0 0 0 0 0 0 Ru: 20 20 104 71 9 15 0 0 0 0 0 0 0 0 0 0 0 0 Pt: 5 5 105 52 13 20 0 0 0 0 0 0 0 0 0 0 0 0 Ag: 5 5 106 32 28 20 1 1 1 1 1 1 1 1 1 1 1 1 Re: 1 20 Ru: 1 Ir: 1 Pd: 1 Pt: 1 Ag: 1 Mixed raw powders Mold- Mold- (at %) Particle Particle ing Mold- ing ( ): size size temper- ing pres- Hydrogen Bending mixture condi- ≤5 ≤30 ature time sure content strength No. ratio tion μm μm (° C.) (h) (MPa) (ppm) (MPa) Remarks 91 Co: 33, A 10 38 950 2 150 15 1200 Present B: 1, Invention Ti (90), Examples pure Ti (10) 92 Co: 20, B 8 32 1000 3 130 10 1200 B: 10, Ta: (93) Fe: 20, B: 10, Ta: (7) 93 Co: 10, B 6 31 900 5 150 9 1000 B: 10, Mo: (82) Fe: 10, B: 10, Mo: (18) 94 Co: 15, C 4 25 1000 5 130 3 1000 B: 10, Ni: (83) Fe: 15, B: 10, Ni: (17) 95 Co: 30, C 4 20 1050 3 120 3 1000 B: 5, Zr: 5, Nb: (26) Fe: 30, B: 5, Zr: 5, Nb: (74) 96 Co: 22, A 9 36 1050 2 120 14 1000 B: 8, V: (29), Fe: 15, B: 5, V: (65), pure B: (1), pure V: (5) 97 Co: 10, A 10 39 1200 7 150 14 1300 B: 5 Hf: 5, V: 5, Mo: 5, Ni: (29) Fe: 10, B: 5, Hf: 5, V: 5, Mo: 5, Ni (71) 98 Co: 10, B 7 34 1200 7 150 10 1300 B: 10, Re: (13) Fe: 10, B: 10, Re: (87) 99 Co: 10, B 7 34 1200 7 120 10 1200 B: 20, W: (29) Fe: 10, B: 20, W: (71) 100 Co: 31, C 3 25 900 5 120 5 1000 Fe: 38, B: (56), pure B: (10), Mn: (16), Ni: (9), Cu: (9) 101 Fe: 24.7, A 9 30 1200 10 120 15 1300 B: 6.3, Zr: 6.3, Nb: 6.3, Pd (95), B: (5) 102 Co: 5.7, B 6 33 1200 10 130 13 1300 Fe: 37.9, B: (61), pure Co: (20), pure Fe: (1), pure B: (1), pure Cr: (13) 103 Co: 10, C 3 24 1050 3 130 5 1000 B: 20, Ru: (80) Fe: 10, B: 20, Ru (20) 104 Co: 10, A 9 39 1100 3 120 16 1200 B: 5, Pt: (87) Fe: 40, B: 5, Pt: (13) 105 Co: 21, B 7 35 1000 2 120 9 1100 B: 4.4, Ag: (82) Co: 75, Fe: 15, B: 8, Ag: (18) 106 Co: 20, C 5 19 800 2 120 3 900 B: 1, Ti: 1, Zr: 1, Hf: 1, V: 1, Nb: 1, Ta: 1, Cr: 1, Mo: 1, W: 1, Mn: 1, Ni: 1, Cu: 1, Re: 1, Ru: 1, IR: 1, Pd: 1, Pt: 1, Ag (53) Fe: 20, B: 1, Ti: 1, Zr: 1, Hf: 1, V: 1, Nb: 1, Ta: 1, Cr: 1, Mo: 1, W: 1, Mn: 1, Ni: 1, Cu: 1, Re: 1, Ru: 1, IR: 1, Pd: 1, Pt: 1, Ag (47)

Nos. 1 to 32 shown in Tables 1 to 3 and Nos. 40 to 87 and Nos. 91 to 106 shown in Tables 5 to 7 are present invention examples, while Nos. 33 to 39 shown in Table 4 and Nos. 88 to 90 shown in Table 6 are Comparative Examples.

The particle size distribution of a powder was measured and confirmed by a laser diffraction/scattering-type particle size distribution measurement apparatus (MICROTRAC). Examples of the molding method include, but are not particularly limited to, HIP, hot press, SPS, and hot extrusion. The content of hydrogen was measured by an inert gas fusion-nondispersive infrared absorption method. The mechanical strength (bending strength) of a specimen having a longitudinal length of 4 mm, a width of 25 mm, and a thickness of 3 mm, obtained by division by a wire, was evaluated by a three-point bending test. In the three-point bending test conducted under the condition of a supporting-point distance of 20 mm, a three-point bending strength was calculated from a stress (N) measured when a pressure was applied downward in a thickness direction to a plane having a longitudinal length of 4 mm and a width of 25 mm, on the basis of the following equation. The calculated three-point bending strength was regarded as a bending strength (MPa).

Three-point bending strength (MPa)=(3×stress (N)×supporting-point distance (mm))/(2×specimen width (mm)×(specimen thickness (mm)²)

Nos. 1 to 26 and Nos. 40 to 87 which are present invention examples are sputtering target materials having compositions shown in Tables 1, 2, 5, and 6, while Nos. 27 to 32 and Nos. 91 to 106 which are present invention examples are sputtering target materials produced from plural raw powders shown in Tables 3 and 7. Each sputtering target material was able to achieve a bending strength of 200 MPa or more because of satisfying the condition of the present invention, in which sputtering target material comprises: 10 to 50% of B; 0 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag; and the balance of at least one of Co and Fe, and unavoidable impurities, wherein a hydrogen content is 20 ppm or less.

In contrast, in Comparative Example No. 33 shown in Table 4, a hydrogen content increased to 25 ppm, and a bending strength decreased to 150 MPa because the cumulative volume of particles having a particle diameter of 5 μm or less in the particle size distribution of a gas-atomized powder used as a raw material of the sputtering target material was 11% and satisfied none of the particle size conditions A to C. In Comparative Example No. 34, a hydrogen content increased to 30 ppm, and a bending strength decreased to 180 MPa because the content of B was less than 10%, and the cumulative volume of particles having a particle diameter of 30 μm or less in the particle size distribution of a gas-atomized powder used as a raw material of the sputtering target material was 41%. In Comparative Example Nos. 35 and 37, hydrogen contents increased to 25 ppm and 23 ppm, and bending strengths decreased to 130 MPa and 150 MPa because the cumulative volumes of particles having a particle diameter of 5 μm or less in the particle size distributions of gas-atomized powders used as raw materials of the sputtering target materials were 12% and 13% and satisfied none of the particle size conditions A to C.

In Comparative Example Nos. 36 and 38, hydrogen contents increased to 22 ppm and 25 ppm, and bending strengths decreased to 160 MPa and 140 MPa because the cumulative volumes of particles having a particle diameter of 30 μm or less in the particle size distributions of gas-atomized powders used as raw materials of the sputtering target materials were 42% and 43% and satisfied none of the particle size conditions A to C. In Comparative Example No. 39, a hydrogen content increased to 26 ppm, and a bending strength decreased to 100 MPa because the cumulative volumes of particles having particle diameters of 5 μm or less and 30 μm or less in the particle size distribution of a gas-atomized powder used as a raw material of the sputtering target material were 14% and 45% and satisfied none of the particle size conditions A to C. The strengths in Comparative Examples are found to be very poor. Comparative Example Nos. 88 to 90 shown in Table 6 are found to result in low strength and brittleness because of comprising more than 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag.

According to the present invention, a sputtering target material of which the mechanical strength is improved by decreasing the content of hydrogen in the sputtering target material to 20 ppm or less is provided as described above. The sputtering target material according to the present invention is a sputtering target material useful for producing an alloy thin film in an MTJ element, an HDD, a medium for magnetic recording, or the like and exhibits a very excellent effect. 

1. A sputtering target material comprising in at. %: 10 to 50% of B; 0 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag; and the balance of at least one of Co and Fe, and unavoidable impurities, wherein a hydrogen content is 20 ppm or less.
 2. The sputtering target material according to claim 1, wherein the sputtering target material comprises, in at. %, 5 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag.
 3. The sputtering target material according to claim 1, wherein the sputtering target material has a bending strength of 200 MPa or more. 